1550nm Superluminescent Chip on Submount >30mW

ALL Product Laser Chip 1550nm Superluminescent Chip on Submount >30mW

Description

The SLT-COS-SLD-1550-30 series is a broadband SLED that operates in a true inherent superluminescent mode. This 1550nm Superluminescent Chip on Submount superluminescent property generates broader band at higher drive currents in contrast to other conventional SLEDs which are ASE-based, where high drive tends to give narrower band. Its low coherence reduces Rayleigh backscattering noise. Coupled with high power and large spectral width, it offsets photoreceiver noise and improves spatial resolution (in OCT) and measurand sensitivity (in sensors). The SLED is available in Chip on submount package. It is compliance with the requirements of Bellcore Document GR-468-CORE.
产品特点

Crystal growth technology,

Output power >30mW

3dB bandwidth >70nm

Chip on submount package

Single-mode

Edge-emitting

Cost effective


产品应用

Seeder for high power laserl

Micromachiningl

OCT


通用参数

Semiconductor inspection equipment

 

 

Electro-Optical Characteristics:

 

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Threshold Current

Ith

Tc=25℃&CW

--

17

50

mA

Optical Output Power

P

Tc=25℃&CW I=400mA

30

40

--

mW

Series Resistance

Rs

Tc=25℃&CW

--

1

--

Ohm

Wavelength

λp

Tc=25℃&CW I=400mA

1530

1550

1570

nm

Spectrum modulation

R

Tc=25℃&CW I=400mA



0.45

dB

Laser diode aperture

--

Tc=25℃&CW I=100mA


3x0.5


um2

Cavity Length

L

--

--

2000

--

μm

Farfield (Vertical)*

θ v

Tc=25℃&CW(FWHM)

--

45

50

°

Farfield (Horizontal)*

θ h

Tc=25℃&CW(FWHM)

--

10

12

°

Linewidth 

BFWHM

 

Tc=25℃&CW I=400mA

60

70

--

nm

*: Specification is met by design and process control, but not tested.


Absolute maximum ratings*：

 

Parameter

Symbol

Min.

Max.

Unit

Storage Temperature

Ts

-40

85

℃

Forward current

If

--

500

mA

Forward power**

Pf

--

100

mW

Reverse Voltage

VR

--

2

V

ESD(HBM)

ESD

--

500

V

*Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

**These maximum stresses are to be applied only after the chip is properly bonded to a heat sink. Applying current to a bare chip can damage the device.

ESD and EOS:

Switching transients can cause electrical overstress (EOS) damage in a chip.

EOS may result from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.

 

 Proper turn-on sequence:

a. All ground connections

b. Most negative supply

c. Most positive supply

d. All remaining connections

 Reverse order to turn-off.

Laser Safety:

Caution: Use of controls, adjustments and procedure other than those specified herein may result in hazardous laser radiation exposure.


Output Power : 

>30mW

FWHM bandwidth(nm) : 

70nm

Laser suitable for chips : 

SLD

Documents

How to order

Please contact us to obtain your customized quotation. Or learn about the product supply situation, more information about bulk discounts, and any questions!



Message or inquiry


Product Model 1

SLT-COS-SLD-1550-30  1550nm Superluminescent Chip on Submount >30mW Center wavelength： 1550nm； Output optical power： 40mW； FWHM bandwidth (nm)： 70nm； Packaging form： COC  {ProductTablePleaseconsult}