Full O+S+C+L band 2.5G DWDM DFB Chip


Description

The laser design is a ridge waveguide (RWG) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) ebeam lithography grating layer.

The devices are compatible with non-hermetic assembly, with facets coated with an anti-reflection (AR) coating at the front and high-reflection (HR) coating at the back.This product is available as a singulated die in Gel-Pak or on tape.

Contact us to discuss your specific requirements



产品特点

30mW per channel CW operation

25GHz channel spacing around 1300nm

Operating temp 20°C to 70°C

Rohs Certificated


通用参数

E/O Characteristics

Electrical/Optical Characteristics (Tsub=25°C, CW bias unless stated otherwise)

Parameter

Symbol

Min

Typ

Max

Unit

Centre Wavelength

λ

CWL±0.4 nm

Side Mode Suppression Ratio

SMSR

35

40


dB

Threshold Current

Ith


20

40

mA

Operating Current

Iop


80

100

mA

Chip output Power

Pf

6



mW

Quantum Efficiency

η

0.2

0.3


mW/mA

Current Tuning Coefficient

∆λ/∆I


0.015


nm/mA

Temperature Tuning Coefficient

∆λ/∆T


0.12


nm/K

Forward Voltage

Vf


1.3

2

V

Kink deviation

KINK

30%

Beam divergence angle (parallel)

ϑ//


25


Deg

Beam Divergence angle (perpendicular)

ϑ⊥


35


Deg

Resistance

Rs


8


ohm

20db width

△λ

0.1

0.35

1

nm

 

Handling Procedures

1. Suggested bonding condition

● Bonding temperature: 350℃

● Bonding force: 30 grams (not exceed 40 grams)

● Bonding force and temperature should be applied in a gradual fashion

● Bonding time: <= 10 seconds

2. Suggested burn-in conditions:

Conditions 1: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours 

● Pass Criteria: BI 0hrs LIV1;BI 24hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤1mA and Delta Pf(T=25℃) ≤10%

Conditions 2: 

● Chip heatsink temperature: 100℃ 

● Current: 100mA 

● Time: 24 hours+48hrs 

● Pass Criteria: BI 24hrs LIV1;BI 24hrs+48hrs LIV2 Compare LIV2 to LIV1 

● Delta Ith (T=25℃) ≤0.7mA and Delta Pf(T=25℃) ≤5%

 

Outline Drawing


Absolute maximum ratings

Item

Unit

Min

Typ

Max

Case Temperature

-5

25

70

Chip Temperature

+10

25

50

Operating Current

mA

0

80

100

Forward Voltage

V

0.8

1.2

2.0

Suggest TEC Current

A

-

-

1.2

Reverse Voltage(LD)

V

-

-

2.0

Reverse Voltage(PD)

V

-

-

20

Note:

1.Stresses which exceed the absolute maximum ratings can cause permanent

damage to the device.

2.These are only absolute stress ratings . Functional operation of the device is not implied at conditions exceeding those given in the operational sections of the data sheet.

3.Exposure to absolute maximum ratings for extended periods can affect device reliability adversely.

Ordering Info

DWDM-DFB Chips-☆-A8▽-W□□□□

☆ :Output Power

A:20mW

▽:Wavelength Tolerance

1:±1nm

2:±2nm

□ □□□:ITU Chanel(Other wavelength just List your CWL Value)

C34:1550.12

*****

C22:1559.79nm

CH

Wavelength (nm)

Frequency (THZ)

CHIP PN

CH

Wavelength (nm)

Frequency (THZ)

CHIP PN

C65

1525.66

196.5

LPDFBC65D-CV1P6

C40

1545.32

194

LPDFBC40D-CV1P6

C64

1526.44

196.4

LPDFBC64D-CV1P6

C39

1546.12

193.9

LPDFBC39D-CV1P6

C63

1527.22

196.3

LPDFBC63D-CV1P6

C38

1546.92

193.8

LPDFBC38D-CV1P6

C62

1527.99

196.2

LPDFBC62D-CV1P6

C37

1547.72

193.7

LPDFBC37D-CV1P6

C61

1528.77

196.1

LPDFBC61D-CV1P6

C36

1548.51

193.6

LPDFBC36D-CV1P6

C60

1529.55

196

LPDFBC60D-CV1P6

C35

1549.32

193.5

LPDFBC35D-CV1P6

C59

1530.33

195.9

LPDFBC59D-CV1P6

C34

1550.12

193.4

LPDFBC34D-CV1P6

C58

1531.12

195.8

LPDFBC58D-CV1P6

C33

1550.92

193.3

LPDFBC33D-CV1P6

C57

1531.90

195.7

LPDFBC57D-CV1P6

C32

1551.72

193.2

LPDFBC32D-CV1P6

C56

1532.68

195.6

LPDFBC56D-CV1P6

C31

1552.52

193.1

LPDFBC31D-CV1P6

C55

1533.47

195.5

LPDFBC55D-CV1P6

C30

1553.33

193

LPDFBC30D-CV1P6

C54

1534.25

195.4

LPDFBC54D-CV1P6

C29

1554.13

192.9

LPDFBC29D-CV1P6

C53

1535.04

195.3

LPDFBC53D-CV1P6

C28

1554.94

192.8

LPDFBC28D-CV1P6

C52

1535.82

195.2

LPDFBC52D-CV1P6

C27

1555.75

192.7

LPDFBC27D-CV1P6

C51

1536.61

195.1

LPDFBC51D-CV1P6

C26

1556.55

192.6

LPDFBC26D-CV1P6

C50

1537.40

195

LPDFBC50D-CV1P6

C25

1557.36

192.5

LPDFBC25D-CV1P6

C49

1538.19

194.9

LPDFBC49D-CV1P6

C24

1558.17

192.4

LPDFBC24D-CV1P6

C48

1538.98

194.8

LPDFBC48D-CV1P6

C23

1558.98

192.3

LPDFBC23D-CV1P6

C47

1539.77

194.7

LPDFBC47D-CV1P6

C22

1559.79

192.2

LPDFBC22D-CV1P6

C46

1540.56

194.6

LPDFBC46D-CV1P6

C21

1560.61

192.1

LPDFBC21D-CV1P6

C45

1541.35

194.5

LPDFBC45D-CV1P6

C20

1561.42

192

LPDFBC20D-CV1P6

C44

1542.14

194.4

LPDFBC44D-CV1P6

C19

1562.23

191.9

LPDFBC19D-CV1P6

C43

1542.94

194.3

LPDFBC43D-CV1P6

C18

1563.05

191.8

LPDFBC18D-CV1P6

C42

1543.73

194.2

LPDFBC42D-CV1P6

C17

1563.86

191.7

LPDFBC17D-CV1P6

C41

1544.53

194.1

LPDFBC41D-CV1P6





 


Output Power : 

>6mW

Laser diode type : 

DFB

Documents

How to order

Please contact us to obtain your customized quotation. Or learn about the product supply situation, more information about bulk discounts, and any questions!



Message or inquiry


DWDM-DFB-Chips-A-A81-WC34  1550.12nm 2.5G DWDM DFB Chip 20mW Center wavelength: 1550.12nm; Chip output power: 20mW; Wavelength tolerance: ± 1nm; Side Mode Suppression Ratio: 40dB; Threshold current: 20mA; Quantum efficiency: 0.3mW/mA  {ProductTablePleaseconsult}